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| JMnic Product Specification Silicon NPN Power Transistors 2SC3506 DESCRIPTION With TO-3PFa package High-speed switching High collector-base voltage VCBO Satisfactory linearity of forward current transfer ratio hFE APPLICATIONS For high-speed switching applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICP IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current TC=25ae PC Collector power dissipation 3 Tj Tstg Junction temperature Storage temperature 150 -55~150 ae ae CONDITIONS Open emitter Open base Open collector VALUE 1000 800 7 3 6 2 70 W UNIT V V V A A A JMnic Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=0.5A ;L=50mH IC=2A ;IB=0.4A IC=2A ;IB=0.4A VCB=1000V; IE=0 VEB=7V; IC=0 IC=2A ; VCE=5V IC=0.2A ; VCE=5V;f=1MHz 6 4 MIN 800 TYP. 2SC3506 SYMBOL VCEO(SUS) VCEsat VBEsat ICBO IEBO hFE fT MAX UNIT V 1.5 1.5 50 50 |I |I V V A A MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=2A; VCC=250V IB1=0.4A ,IB2=-0.8A 1.0 2.5 0.5 |I |I |I s s s 2 JMnic Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3506 Fig.2 Outline dimensions (unindicated tolerance:A 0.30mm) 3 JMnic Product Specification Silicon NPN Power Transistors 2SC3506 4 |
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